Influence of RF bias on hydrogenated amorphous silicon by high-density plasma chemical vapor deposition

Journal of the Electrochemical Society

Volumn 154, Issue 5, 2007, Pages

  Hsiao, Wen Chu ^a   Liu, Chuan Pu ^a   Wang, Ying Lang ^b,c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^c NATIONAL CHIAYI UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; HEATING; MICROSTRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMODYNAMIC STABILITY; THIN FILMS;

HIGH-DENSITY PLASMA CHEMICAL VAPOR DEPOSITION; POWER DENSITY; RADIO FREQUENCY (RF) POWER; STRETCHING MODES;

AMORPHOUS SILICON;

EID: 34047105150     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2713723     Document Type: Article

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