The influence of hydrogen dilution ratio on the crystallization of hydrogenated amorphous silicon films prepared by plasma-enhanced chemical vapor deposition

Thin Solid Films

Volumn 302, Issue 1-2, 1997, Pages 17-24

  Kim, Hae Yeol ^a   Lee, Ki Young ^a   Lee, Jai Young ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Annealing; Crystallization; Hydrogen; Silicon

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTALLIZATION; GRAIN SIZE AND SHAPE; HYDROGEN BONDS; HYDROGENATION; NUCLEATION; PLASMA APPLICATIONS; RELAXATION PROCESSES; SILANES;

HYDROGEN DILUTION RATIO; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

AMORPHOUS FILMS;

EID: 0031165624     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09573-9     Document Type: Article

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