Effect of deposition temperature on the crystallization mechanism of amorphous silicon films on glass

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6862-6866

  Lee, Jeong No ^a   Lee, Bum Joo ^a   Moon, Dae Gyu ^a,b   Ahn, Byung Tae ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b LG Electronics Inc   (South Korea)

Author keywords

Deposition temperature; Double layer; Nucleation rate; Si; Solid phase crystallization

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CRYSTALLIZATION; GLASS; GRAIN SIZE AND SHAPE; NITROGEN; NUCLEATION; PLASMA APPLICATIONS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON;

ARHENNIUS EQUATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

AMORPHOUS FILMS;

EID: 0031274441     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6862     Document Type: Article

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