XPS study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS

ECS Transactions

Volumn 41, Issue 7, 2011, Pages 137-146

  Nohira, H ^a   Komatsu, A ^a   Yamashita, K ^a   Kakushima, K ^b   Iwai, H ^b   Hoshi, Y ^a   Sawano, K ^a   Shiraki, Y ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CMOS INTEGRATED CIRCUITS; GERMANIUM COMPOUNDS; HAFNIUM OXIDES; INTERFACE STATES; LAMINATING; LANTHANUM OXIDES; LOGIC GATES; NONDESTRUCTIVE EXAMINATION; OXIDATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR ALLOYS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

ADVANCED CMOS; CHEMICAL BONDING STATE; COMPOSITIONAL DEPTH PROFILE; GATE STACKS; IN0.53GA0.47AS; INTERLAYER INSERTION; NONDESTRUCTIVE CHARACTERIZATION; STRAINED-GE;

SILICON;

EID: 84857297384     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3633293     Document Type: Conference Paper

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