Interfacial engineering of InGaAs/high-k metal-oxide-semiconductor field effect transistors (MOSFETs)

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2009, Pages 46-49

  Sonnet, A M ^a   Galatage, R V ^a   Jivani, M N ^a   Milojevic, M ^a   Chapman, R A ^a   Hinkle, C L ^a   Wallace, R M ^a   Vogel, E M ^a  

^a UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GATE DIELECTRICS; GOLD COMPOUNDS; HAFNIUM OXIDES; III-V SEMICONDUCTORS; INDIUM ALLOYS; METALS; MOS DEVICES; NICKEL COMPOUNDS; OXIDE SEMICONDUCTORS; PASSIVATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SILICON COMPOUNDS;

CHARGE PUMPING MEASUREMENTS; EX SITU; GATE METALS; HIGH DRIVE CURRENT; HIGH- K; METALOXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFETS); SUBTHRESHOLD; SURFACE PASSIVATION; TRANSPORT CHARACTERISTICS;

MOSFET DEVICES;

EID: 77951026833     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2009.5383036     Document Type: Conference Paper

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