Electrical characteristics of HfO2 and La2O 3 gate dielectrics for In0.53Ga0.47As MOS structure

ECS Transactions

Volumn 25, Issue 6, 2009, Pages 265-270

  Funamizu, K ^a   Lin, Y C ^b   Kakushima, K ^a   Ahmet, P ^a   Tsutsui, K ^a   Sugii, N ^a   Chang, E Y ^b   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; GALLIUM COMPOUNDS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LANTHANUM OXIDES; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS;

ELECTRICAL CHARACTERISTIC; IN0.53GA0.47AS; MOS STRUCTURE;

GATE DIELECTRICS;

EID: 76549089579     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3206625     Document Type: Conference Paper

References (7)

1. M. W. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, and A. M. Sergent, Science 283, 1897(1999).
2. F. Ren, M. W. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, Y. K. Chen, and A. Y. Cho, Tech. Dig. IEDM. p. (1996)
3. J. K. Yang, M. G. Kang, and H. H. Park, J. Appl. Phys. 96, 4811 (2004).
4. P. D. Ye, G. D. Wilk, J. Kwo, B. Yang, H.-J. L. Gossmann, M. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, IEEE Electron Device Lett. 24, 209 (2003).
5. Y. Xuan, P. D. Ye, H. C. Lin, and G. D. Wilk, Appl. Phys. Lett. 89, 132103 (2006).
6. W. E. Spicer, Z. Liliental-Weber, E. Weber, N. Newmann, T. Kendelewicz, R. Cao, C. McCants, P. Mahowald, K. Miyano, and I. Lindau, J. Vac. Sci. Technol. B 6, 1245 (1988).
7. Goel.N et al., Appl. Phys. Lett., 89, 163517 (2006).