Mobility enhancement in strained Ge heterostructures by planarization of SiGe buffer layers grown on Si substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 42-45, 2005, Pages

  Sawano, Kentarou ^a   Abe, Yasuhiro ^a   Satoh, Hikaru ^a   Nakagawa, Kiyokazu ^b   Shiraki, Yasuhiro ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

CMP; SiGe; Strained Ge

Indexed keywords

CHEMICAL MECHANICAL POLISHING; GERMANIUM; HOLE MOBILITY; SEMICONDUCTOR DOPING; SILICON; SURFACE ROUGHNESS;

MOBILITY ENHANCEMENT; SIGE; STRAINED GE;

HETEROJUNCTIONS;

EID: 30344452612     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1320     Document Type: Article

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