Advantage of la2O3 gate dielectric over HfO 2 for direct contact and mobility improvment

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Volumn , Issue , 2008, Pages 126-129

  Kakushima, K ^a   Tachi, K ^a   Adachi, M ^a   Okamoto, K ^a   Sato, S ^a   Song, J ^a   Kawanago, T ^a   Ahmet, P ^a   Tsutsui, K ^a   Sugii, N ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MOSFET DEVICES; SILICATES; SILICON COMPOUNDS;

COULOMB SCATTERINGS; DIRECT CONTACTS; EFFECTIVE MOBILITIES; EQUIVALENT OXIDE THICKNESSES; INDUCED DEFECTS; INTERFACIAL LAYERS; INTERFACIAL STATE DENSITIES; METAL GATES; MOBILITY ANALYSES; MOBILITY DEGRADATIONS; MOS FETS;

LANTHANUM;

EID: 58049087134     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681715     Document Type: Conference Paper

References (7)

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