The role of liquid phase epitaxy during growth of AlGaN by MBE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 580-583

  Moustakas, Theodore D ^a   Bhattacharyya, Anirban ^a  

^a Northeastern University   (United States)

Author keywords

AlGaN; Internal quantum efficiency; Liquid phase epitaxy; Molecular beam epitaxy; Potential fluctuations

Indexed keywords

ALGAN; ALLOY COMPONENTS; CONCENTRATION GRADIENTS; DRIVING FORCES; EMISSION PROPERTIES; GA-RICH CONDITIONS; GAN GROWTH; GROWTH MECHANISMS; GROWTH MODELS; GROWTH MODES; III-NITRIDE SEMICONDUCTORS; INTERNAL QUANTUM EFFICIENCY; LIQUID PHASE EPITAXIES (LPE); MBE GROWTH; PLASMA-ASSISTED MBE; POTENTIAL FLUCTUATIONS; RELATIVE TEMPERATURES;

ALUMINUM ALLOYS; DESORPTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; INDIUM ALLOYS; IONIZATION OF GASES; LIQUID PHASE EPITAXY; LIQUIDS; MAGNESIUM; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

FILM GROWTH;

EID: 84857205070     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100427     Document Type: Article

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