Low-temperature Ge and GeSn chemical vapor deposition using Ge 2H 6

Thin Solid Films

Volumn 520, Issue 8, 2012, Pages 3211-3215

  Gencarelli, F ^a,b   Vincent, B ^a   Souriau, L ^a   Richard, O ^a   Vandervorst, W ^a,b   Loo, R ^a   Caymax, M ^a   Heyns, M ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Chemical Vapor Deposition; Digermane; Germanium; Germanium tin; Low temperature

Indexed keywords

DIGERMANE; DIRECT DEPOSITION; GE EPITAXIAL GROWTH; GE SUBSTRATES; GROWTH MECHANISMS; HIGH QUALITY; LOW TEMPERATURES; METALLIC SURFACE; MONOCRYSTALLINE; SI SUBSTRATES; VERY LOW TEMPERATURES;

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; EPITAXIAL GROWTH; METALLIC COMPOUNDS; SURFACE REACTIONS; TEMPERATURE; TIN;

GERMANIUM;

EID: 84857036403     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.119     Document Type: Conference Paper

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