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Volumn 98, Issue 19, 2011, Pages

Molecular beam deposition of Al2 O3 on p-Ge (001) / Ge0.95 Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

(11) Merckling, C a Sun, X b,c Shimura, Y d Franquet, A a Vincent, B a Takeuchi, S d,e Vandervorst, W a Nakatsuka, O d Zaima, S d Loo, R a Caymax, M a

a IMEC (Belgium)

b UNIVERSITY OF LEUVEN (Belgium)

c Yale University (United States)

d NAGOYA UNIVERSITY (Japan)

e Covalent Silicon Corporation (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC CONFIGURATION; CAP LAYERS; CAPACITANCE-VOLTAGE CHARACTERISTICS; CAPPED SAMPLES; DEOXIDATION; GATE STACKS; IN-SITU DEPOSITION; INTERFACE TRAP DENSITY; INTERFACIAL LAYER; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MOLECULAR BEAM DEPOSITION; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPY; ULTRA-THIN; VALENCE BAND EDGES;

ALUMINUM; CHEMICAL MODIFICATION; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; MOLECULAR BEAMS; SECONDARY ION MASS SPECTROMETRY; VANADIUM;

TIN;

EID: 79959684367 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3589992 Document Type: Article

Times cited : (44)

References (14)

1
- 33847000926
- 1938-5862 , 10.1149/1.2355848
- M. Heyns, M. Meuris, and M. Caymax, ECS Trans. 1938-5862 3 (7), 511 (2006). 10.1149/1.2355848
- (2006) ECS Trans. , vol.3 , Issue.7 , pp. 511
- Heyns, M.¹ Meuris, M.² Caymax, M.³

2
- 81555218095
- 0163-1918.
- R. Pillarisetty, B. Chu-Kung, S. Corcoran, G. Dewey, J. Kavalieros, H. Kennel, R. Kotlyar, V. Le, D. Lionberger, M. Metz, N. Mukherjee, J. Nah, W. Rachmady, M. Radosavljevic, U. Shah, S. Taft, H. Then, N. Zelick, and R. Chau, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2010, 6.7.1.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2010 , pp. 671
- Pillarisetty, R.¹ Chu-Kung, B.² Corcoran, S.³ Dewey, G.⁴ Kavalieros, J.⁵ Kennel, H.⁶ Kotlyar, R.⁷ Le, V.⁸ Lionberger, D.⁹ Metz, M.¹⁰ Mukherjee, N.¹¹ Nah, J.¹² Rachmady, W.¹³ Radosavljevic, M.¹⁴ Shah, U.¹⁵ Taft, S.¹⁶ Then, H.¹⁷ Zelick, N.¹⁸ Chau, R.¹⁹

3
- 79751534826
- 0167-9317, 10.1016/j.mee.2010.10.025
- B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, G. Eneman, A. Firrincieli, J. Demeulemeester, A. Vantomme, T. Clarysse, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, and R. Loo, Microelectron. Eng. 0167-9317 88, 342 (2011). 10.1016/j.mee.2010.10.025
- (2011) Microelectron. Eng. , vol.88 , pp. 342
- Vincent, B.¹ Shimura, Y.² Takeuchi, S.³ Nishimura, T.⁴ Eneman, G.⁵ Firrincieli, A.⁶ Demeulemeester, J.⁷ Vantomme, A.⁸ Clarysse, T.⁹ Nakatsuka, O.¹⁰ Zaima, S.¹¹ Dekoster, J.¹² Caymax, M.¹³ Loo, R.¹⁴

4
- 33846411826
- 0556-2805, 10.1103/PhysRevB.75.045208
- J. D. Sau and M. L. Cohen, Phys. Rev. B 0556-2805 75, 045208 (2007). 10.1103/PhysRevB.75.045208
- (2007) Phys. Rev. B , vol.75 , pp. 045208
- Sau, J.D.¹ Cohen, M.L.²

5
- 77949765169
- 0021-8979, 10.1063/1.3326162
- Y. Chibane and M. Ferhat, J. Appl. Phys. 0021-8979 107, 053512 (2010). 10.1063/1.3326162
- (2010) J. Appl. Phys. , vol.107 , pp. 053512
- Chibane, Y.¹ Ferhat, M.²

6
- 67349166635
- 0167-9317, 10.1016/j.mee.2009.03.048
- C. Merckling, J. Penaud, D. Kohen, F. Bellenger, A. Alian, G. Brammertz, M. El-Kazzi, M. Houssa, J. Dekoster, M. Caymax, M. Meuris, and M. M. Heyns, Microelectron. Eng. 0167-9317 86, 1592 (2009). 10.1016/j.mee.2009.03.048
- (2009) Microelectron. Eng. , vol.86 , pp. 1592
- Merckling, C.¹ Penaud, J.² Kohen, D.³ Bellenger, F.⁴ Alian, A.⁵ Brammertz, G.⁶ El-Kazzi, M.⁷ Houssa, M.⁸ Dekoster, J.⁹ Caymax, M.¹⁰ Meuris, M.¹¹ Heyns, M.M.¹²

7
- 45149116746
- 0003-6951, 10.1063/1.2945629
- S. Takeuchi, Y. Shimura, O. Nakatsuka, S. Zaima, M. Ogawa, and A. Sakai, Appl. Phys. Lett. 0003-6951 92, 231916 (2008). 10.1063/1.2945629
- (2008) Appl. Phys. Lett. , vol.92 , pp. 231916
- Takeuchi, S.¹ Shimura, Y.² Nakatsuka, O.³ Zaima, S.⁴ Ogawa, M.⁵ Sakai, A.⁶

8
- 45049083518
- 0169-4332, 10.1016/j.apsusc.2008.02.175
- M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima, Appl. Surf. Sci. 0169-4332 254, 6048 (2008). 10.1016/j.apsusc.2008.02.175
- (2008) Appl. Surf. Sci. , vol.254 , pp. 6048
- Yamazaki, M.¹ Takeuchi, S.² Nakatsuka, O.³ Sakai, A.⁴ Ogawa, M.⁵ Zaima, S.⁶

9
- 0001305313
- Q. K. Xue, T. Hashizume, A. Ichimiya, T. Ohno, Y. Hasegawa, and T. Sakurai, Sci. Rep. Res. Inst. Tohoku Univ. A A44, 113 (1997).
- (1997) Sci. Rep. Res. Inst. Tohoku Univ. A , vol.44 , pp. 113
- Xue, Q.K.¹ Hashizume, T.² Ichimiya, A.³ Ohno, T.⁴ Hasegawa, Y.⁵ Sakurai, T.⁶

10
- 34047117725
- An atomic seesaw switch formed by tilted asymmetric Sn-Ge dimers on a Ge (001) surface
- DOI 10.1126/science.1137848
- K. Tomatsu, K. Nakatsuji, T. Iimori, Y. Takagi, H. Kusuhara, A. Ishii, and F. Komori, Science 0036-8075 315, 1696 (2007). 10.1126/science.1137848 (Pubitemid 46515619)
- (2007) Science , vol.315 , Issue.5819 , pp. 1696-1698
- Tomatsu, K.¹ Nakatsuji, K.² Iimori, T.³ Takagi, Y.⁴ Kusuhara, H.⁵ Ishii, A.⁶ Komori, F.⁷

11
- 79751533891
- 0167-9317, 10.1016/j.mee.2010.09.012
- C. Merckling, Y. C. Chang, C. Y. Lu, J. Penaud, M. El-Kazzi, F. Bellenger, G. Brammertz, M. Hong, J. Kwo, M. Meuris, J. Dekoster, M. M. Heyns, and M. Caymax, Microelectron. Eng. 0167-9317 88, 399 (2011). 10.1016/j.mee.2010.09.012
- (2011) Microelectron. Eng. , vol.88 , pp. 399
- Merckling, C.¹ Chang, Y.C.² Lu, C.Y.³ Penaud, J.⁴ El-Kazzi, M.⁵ Bellenger, F.⁶ Brammertz, G.⁷ Hong, M.⁸ Kwo, J.⁹ Meuris, M.¹⁰ Dekoster, J.¹¹ Heyns, M.M.¹² Caymax, M.¹³

12
- 77951878588
- 0741-3106, 10.1109/LED.2010.2044011
- F. Bellenger, B. De Jaeger, C. Merckling, M. Houssa, J. Penaud, L. Nyns, E. Vrancken, M. Caymax, M. Meuris, T. Hoffmann, K. De Meyer, and M. Heyns, IEEE Electron Device Lett. 0741-3106 31, 402 (2010). 10.1109/LED.2010.2044011
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 402
- Bellenger, F.¹ De Jaeger, B.² Merckling, C.³ Houssa, M.⁴ Penaud, J.⁵ Nyns, L.⁶ Vrancken, E.⁷ Caymax, M.⁸ Meuris, M.⁹ Hoffmann, T.¹⁰ De Meyer, K.¹¹ Heyns, M.¹²

13
- 0004277486
- (Wiley, New York).
- E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
- (1982) MOS Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

14
- 63149191329
- 1938-5862 , 10.1149/1.2981622
- F. Bellenger, C. Merckling, J. Penaud, M. Houssa, M. Caymax, M. Meuris, K. De Meyer, and M. M. Heyns, ECS Trans. 1938-5862 16 (5), 411 (2008). 10.1149/1.2981622
- (2008) ECS Trans. , vol.16 , Issue.5 , pp. 411
- Bellenger, F.¹ Merckling, C.² Penaud, J.³ Houssa, M.⁴ Caymax, M.⁵ Meuris, M.⁶ De Meyer, K.⁷ Heyns, M.M.⁸

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