Low temperature silcore® deposition of undoped and doped silicon films

ECS Transactions

Volumn 3, Issue 2, 2006, Pages 203-215

  Fischer, P R ^a   Bauer, M ^b   Van Aerde, S R A ^a   Oosterlaken, T G M ^a   Yan, M ^a   Verweij, W A ^a   Bozon, B W M ^a   Zagwijn, P M ^a  

^a ASM International NV   (Netherlands)

^b ASM AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; DEPOSITION; SILICON; SILICON WAFERS; THERMAL EFFECTS;

FILM DEPOSITION; SILCORE CHEMISTRY; SILICON FILMS;

THIN FILMS;

EID: 33846941615     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2356280     Document Type: Conference Paper

References (12)

1. S. Somekh, Future Fab Intl, 11, (2001).
2. D.A. Antoniadis, et. al, IBM Journal of Research and Development: Advanced Silicon Technology, 50(4-5), 1 (2006).
3. M. Ieong, et. al, Materials Today, 9(6), 26 (2006).
4. T. Kamins, Polycrystalline Silicon for Integrated Circuits and Displays, Kluwer Academic Publishers, Boston (1998).
5. W.L.M. Weerts, Low Pressure CVD of Polycrystalline Silicon: Reaction Kinetics and Reactor Modeling, Ph.D. Dissertation, Eindhoven University of Technology, Eindhoven, the Netherlands (1995).
6. W.L.M. Weerts, M.H.J.M. de Croon, G.B.M.M. Marin, J. Electrochem. Soc., 145(4), 1318-1330, (1998).
7. J. Holleman, J.F. Verweij, J. Electrochem. Soc., 140(7), 2089-2097, (1998).
8. M.T. Swihart, S.L. Gershick, J. Phys. Chem. B, 103, 64-76, (1999).
9. M.T. Swihart, R.W. Carr, J. Phys. Chem. A, 102, 1542-1549, (1998).
10. M.A. Ring, H.E. O'Neal, J. Phys. Chem., 96, 10848, (1992).
11. R. Becerra, R. Walsh, J. Phys. Chem., 96, 10856, (1992).
12. D.L. Smith, Thin-Film Deposition: Principles and Practice, McGraw Hill, Boston (1995).