Low-temperature RPCVD of Si, SiGe alloy, and Si1-yCy films on Si substrates using trisilane (Silcore®)

Journal of Crystal Growth

Volumn 311, Issue 13, 2009, Pages 3522-3527

  Gouye A ^a   Kermarrec, O ^a   Halimaoui, A ^a   Campidelli, Y ^a   Rouchon, D ^b   Burdin, M ^b   Holliger, P ^b   Bensahel, D ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

Author keywords

A1. Crystal structure; A1. Desorption; A1. Stress; A1. Surface morphology; A3. Chemical vapor deposition process; B1. Germanium silicon alloys

Indexed keywords

A1. CRYSTAL STRUCTURE; A1. DESORPTION; A1. STRESS; A1. SURFACE MORPHOLOGY; A3. CHEMICAL VAPOR DEPOSITION PROCESS; B1. GERMANIUM SILICON ALLOYS;

CARBON FILMS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DESORPTION; EPITAXIAL GROWTH; GEOPHYSICAL PROSPECTING; GERMANIUM; GERMANIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; MORPHOLOGY; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON; SURFACE MORPHOLOGY; SURFACE PROPERTIES; SURFACE ROUGHNESS; VAPORS;

SILICON ALLOYS;

EID: 66649131354     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.04.011     Document Type: Article

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