Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

Journal of Crystal Growth

Volumn 312, Issue 19, 2010, Pages 2671-2676

  Vincent, B ^a   Loo, R ^a   Vandervorst, W ^a,b   Brammertz, G ^a   Caymax, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

A1. Crystal structure; A1. Desorption; A3. Chemical vapor deposition processes; B2. Semiconducting silicon; B3. Field effect transistors

Indexed keywords

A1. CRYSTAL STRUCTURE; A1. DESORPTION; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; B2. SEMICONDUCTING SILICON; CARRIER GAS; DICHLOROSILANES; GROWTH MECHANISMS; LOW TEMPERATURES; PRECURSOR FLOW; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; TRISILANES;

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; DESORPTION; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

SEMICONDUCTING SILICON;

EID: 77956181352     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.06.013     Document Type: Article

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