Chemical vapor deposition epitaxy of silicon-based materials using neopentasilane

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 799-805

  Sturm, J C ^a   Chung, K H ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GERMANIUM COMPOUNDS;

CHEMICAL VAPOR; CONCERTED MECHANISM; HIGH GROWTH RATE; HIGH QUALITY; HIGH-ORDER; OPEN SITES; PLANAR FILMS; SILICON-BASED MATERIALS;

SI-GE ALLOYS;

EID: 63149136318     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986839     Document Type: Conference Paper

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