Ge1-y Sny Si (100) composite substrates for growth of Inx Ga1-x As and Ga As1-x Sbx alloys

Journal of Applied Physics

Volumn 101, Issue 1, 2007, Pages

  Roucka, Radek ^a   Tolle, John ^a   Forrest, Brandon ^a   Kouvetakis, John ^a   D'costa, Vijay R ^a   Meńndez, Joś ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION CHANNELING; LATTICE MATCHING; LOMER EDGE DISLOCATIONS; SEMICONDUCTOR ALLOYS;

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); GERMANIUM ALLOYS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR GROWTH;

SEMICONDUCTOR MATERIALS;

EID: 33846284530     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2407274     Document Type: Article

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