GaN-based high temperature and radiation-hard electronics for harsh environments

Nanoscience and Nanotechnology Letters

Volumn 2, Issue 2, 2010, Pages 89-95

  Son, Kyung Ah ^a   Liao, Anna ^a   Lung, Gerald ^a   Gallegos, Manuel ^a   Hatake, Toshiro ^a   Harris, Richard D ^a   Scheick, Leif Z ^a   Smythe, William D ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

AlGaN GaN; High Temperature; MOS Transistor; Radiation Hard; Schottky Free

Indexed keywords

ALGAN/GAN; DATA ACQUISITION ELECTRONICS; DEVICE PERFORMANCE; GAMMA SOURCE; GATE DIELECTRIC LAYERS; GATE ELECTRODES; GATE OXIDE LAYERS; GATE-LEAKAGE CURRENT; HARSH ENVIRONMENT; HIGH TEMPERATURE; ION DOSE; METAL OXIDE SEMICONDUCTOR; MOS TRANSISTOR; MOS TRANSISTORS; OFF-STATE CURRENT; PINCHOFF; PLANETARY ENVIRONMENTS; RADIATION HARDNESS; RADIATION HARDNESS TESTING; SATURATION CURRENT; SCHOTTKY; SUB-THRESHOLD CURRENT; TEMPERATURE RANGE; WIDE BAND GAP;

FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GATE DIELECTRICS; GATES (TRANSISTOR); HARDNESS; HARDNESS TESTING; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; MOS DEVICES; RADIATION; REFRACTORY METAL COMPOUNDS; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

GALLIUM NITRIDE;

EID: 79952320464     PISSN: 19414900     EISSN: 19414919     Source Type: Journal    
DOI: 10.1166/nnl.2010.1063     Document Type: Article

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