Plasma surface pretreatment effects on silicon nitride passivation of AlGaN/GaN HEMTs

2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Volumn , Issue , 2007, Pages 305-307

  Meyer, David J ^a   Flemish, Joseph R ^a   Redwing, Joan M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

AlGaN; HEMT; Passivation; Pulsed IV; Transistor

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; ATOMIC CONCENTRATION; PLASMA SURFACE TREATMENT; PLASMA SURFACES; PULSED IV; RF DISPERSION; SILICON NITRIDE PASSIVATION;

PASSIVATION; PLASMAS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; SURFACE CHEMISTRY; SURFACE TREATMENT; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84887483650     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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3. G. H. Jessen, et al., Appl. Phys. Lett. 83, 485-487 (2003).
4. H. Kim, et al., Appl. Phys. Lett. 86, 143505 (2005).