High power, high efficiency, AlGaN/GaN HEMT technology for wireless base station applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 487-490

  Vetury, R ^a   Wei, Y ^a   Green, D S ^a   Gibb, S R ^a   Mercier, T W ^a   Leverich, K ^a   Garber, P M ^a   Poulton, M J ^a   Shealy, J B ^a  

^a RF MICRO DEVICES   (United States)

Author keywords

Field plate; GaN; HEMT; WCDMA

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; ELECTRIC POTENTIAL; FREQUENCY MODULATION; GATES (TRANSISTOR); MICROWAVES; SEMICONDUCTING GALLIUM ARSENIDE; SILICON COMPOUNDS;

FIELD PLATES; GATE WIDTHS; SIC SUBSTRATES; WIRELESS BASE STATION APPLICATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33748500928     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516636     Document Type: Conference Paper

References (11)

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