Multilevel storage in lateral top-heater phase-change memory

IEEE Electron Device Letters

Volumn 29, Issue 8, 2008, Pages 876-878

  Yin, You ^a   Ota, Kazuhiro ^a   Higano, Naoya ^a   Sone, Hayato ^a   Hosaka, Sumio ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

Lateral; Multilevel storage (MLS); Nonvolatile memories; Phase change memories (PCMs); Top heater

Indexed keywords

AIRCRAFT LANDING SYSTEMS; DATA STORAGE EQUIPMENT; INDUCED CURRENTS; PULSE CODE MODULATION; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

ACTIVE LAYERS; GRADUAL ENLARGEMENT; JOULE HEATING; LATERAL; MULTILEVEL STORAGE; MULTILEVEL STORAGE (MLS); MULTILEVELS; NONVOLATILE MEMORIES; PHASE-CHANGE MEMORIES; PHASE-CHANGE MEMORIES (PCMS); REVERSIBLE SWITCHING; TOP HEATER;

PHASE CHANGE MEMORY;

EID: 48649090655     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000793     Document Type: Article

References (18)

1. S. R. Ovshinsky, "Reversible electrical switching phenomena in disordered structures," Phys. Rev. Lett., vol. 21, no. 20, pp. 1450-1453, Nov. 1908.
2. S. Lai and T. Lowrey, "OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications," in IEDM Tech. Dig., 2001, pp. 803-806.
3. Y. Yin, H. Sone, and S. Hosaka, "Simulation of proposed confined-chalcogenide phase-change random access memory for low reset current by finite element modelling," Jpn. J. Appl. Phys., vol. 45, no. 8A, pp. 6177-0181, Aug. 2006.
4. 5 films studied by electrical resistance measurements," J. Appl. Phys., vol. 87, no. 9, pp. 4130-4134, May 2000.
5. K. Nakayama, K. Kojima, Y. Imai, T. Kasai, S. Fukushima, A. Kitagawa, M. Kumeda, Y. Kakimoto, and M. Suzuki, "Nonvolatile memory based on phase change in Se-Sb-Te glass," Jpn. J. Appl. Phys., vol. 42, no. 2A, pp. 404-408, Feb. 2003.
6. Y. Yin, N. Higano, H. Sone, and S. Hosaka, "Ultra-multiple-level storage in TiN/SbTeN double-layer cell for high-density non-volatile memory," Appl. Phys. Lett., vol. 92, no. 16, p. 103 509, Apr. 2008.
7. D.-H. Ahn, D.-H. Kang, B.-K. Cheong, H.-S. Kwon, M.-H. Kwon, T.-Y. Lee, J.-H. Jeong, T. S. Lee, I. H. Kim, and K.-B. Kim, "A nonvolatile memory based on reversible phase changes between fcc and hcp," IEEE Electron Device Lett., vol. 26, no. 5, pp. 280-288, May 2005.
8. S. Hosaka, K. Miyauchi, T. Tumura, Y. Yin, and H. Sone, "Prototype of phase-change channel transistor for both nonvolatile memory and current control," IEEE Trans. Electron Devices, vol. 54, no. 3, pp. 517-523, Mar. 2007.
9. B. Yu, S. Ju, X. Sun, G. Ng, T. D. Nguyen, M. Meyyappan, and D. B. Janes, "Indium selenide nanowire phase-change memory," Appl. Phys. Lett., vol. 91, no. 13, p. 133 119, Sep. 2007.
10. M. H. R. Lankhorst, B. W. S. M. M. Ketelaars, and R. A. M. Wolters, "Low-cost and nanoscale non-volatile memory concept for future silicon chips," Nat. Mater., vol. 4, no. 4, pp. 347-352, Apr. 2005.
11. Y. Yin, A. Miyachi, D. Niida, H. Sone, and S. Hosaka, "A novel lateral phase-change random access memory characterized by ultra low reset current and power consumption," Jpn. J. Appl. Phys., vol. 45, no. 28, pp. L726-L729, Jul. 2006.
12. F. Merget, D. H. Kim, P. H. Bolivar, and H. Kurz, "Lateral phase change random access memory cell design for low power operation," Microsyst. Technol., vol. 13, no. 2, pp. 169-172, Jan. 2007.
13. Y. F. Lai, J. Feng, B. W. Qiao, Y. F. Cai, Y. Y. Lin, T. A. Tang, B. C. Cai, and B. Chen, "Stacked chalcogenide layers used as multi-state storage medium for phase change memory," Appl. Phys. A: Mater. Sci. Process., vol. 84, no. 12, pp. 21-25, 2006.
14. J. Feng, Y. F. Lai, B. W. Qiao, B. C. Cai, Y. Y. Lin, T. A. Tang, and B. Chen, "Design of multi-states storage medium for phase change memory," Jpn. J. Appl. Phys., vol. 46, no. 9A, pp. 5724-5728, Sep. 2007.
15. Y. Yin, H. Sone, and S. Hosaka, "Lateral SbTeN based multi-layer phase change memory for multi-state storage," Microelectron. Eng., vol. 84, no. 12, pp. 2901-2906, Dec. 2007.
16. 3)," Jpn. J. Appl. Phys., vol. 46, no. 2, pp. L25-L27, Jan. 2007.
17. 3 films and their application to phase-change memory," J. Appl. Phys., vol. 102, no. 6, p. 064 503, Sep. 2007.
18. S. R. Ovshinsky and H. Fritzsche, "Amorphous semiconductors for switching, memory, and imaging applications," IEEE. Trans. Electron Devices, vol. ED-20, no. 2, pp. 91-105, Feb. 1973.