Bipolar switching characteristics of nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) thin film

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Ha, Heonjun ^a   Kim, Ohyun ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILMS; DATA STORAGE EQUIPMENT; ELECTRODES; METALLIZING; OPTICAL DESIGN; PHOTOLITHOGRAPHY; THICK FILMS; THIN FILM DEVICES; THIN FILMS; TIN; TITANIUM COMPOUNDS;

AMERICAN INSTITUTE OF PHYSICS (AIP); CURRENT PATHS; ELECTRIC CHARACTERISTICS; ETHYLENE DIOXYTHIOPHENE (PEDOT); INDIUM-TIN-OXIDE (ITO) ELECTRODES; NON VOLATILE MEMORY (NVM) DEVICES; ON/OFF CURRENT RATIO; PEDOT:PSS; POLYSTYRENE-SULFONATE (PSS); READ-CYCLE; RETENTION TIME (RT); SWITCHING CHARACTERISTICS;

INDIUM;

EID: 48249100173     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2960998     Document Type: Article

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