Resistive molecular memories: Influence of molecular parameters on the electrical bistability

Journal of the American Chemical Society

Volumn 131, Issue 18, 2009, Pages 6591-6598

  Di Motta, Simone ^a,b   Di Donato, Eugenio ^a,b   Negri, Fabrizia ^a,b   Orlandi, Giorgio ^a,b   Fazzi, Daniele ^c,d   Castiglioni, Chiara ^c,d  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b INSTM   (Italy)

^c POLITECNICO DI MILANO   (Italy)

^d INSTM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BENZOQUINONES; BULK CHARGE; BULK TRANSPORT; CHARGE HOPPING; CHARGE TRANSPORT; COLLECTIVE EFFECTS; ELECTRICAL BISTABILITY; HOPPING RATE; INTERMOLECULAR CHARGE TRANSFER; INTRAMOLECULAR REORGANIZATION ENERGIES; MEMORY EFFECTS; MEMORY PHENOMENON; MOLECULAR DYNAMICS SIMULATIONS; MOLECULAR LEVELS; MOLECULAR MEMORIES; MOLECULAR PARAMETERS; MOLECULAR SPECIES; PENTACENES; THERMAL DISORDER; TRANSPORT MECHANISM;

CHARGE TRANSFER; COMPUTER SCIENCE; ION EXCHANGE; MASS TRANSFER; MOLECULAR DYNAMICS; OPTICAL BISTABILITY; SEMICONDUCTING ORGANIC COMPOUNDS;

IONIZATION POTENTIAL;

BENZOQUINONE DERIVATIVE;

ARTICLE; CHEMICAL STRUCTURE; ELECTRIC POTENTIAL; ELECTRICITY; ELECTRODE; IONIZATION; MOLECULAR DYNAMICS; MOLECULAR ELECTRONICS; QUANTUM CHEMISTRY; SIMULATION; STRUCTURE ANALYSIS; SURFACE CHARGE; TRANSPORT KINETICS;

EID: 70149123632     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja901101c     Document Type: Article

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