Atomic layer deposition of Al2O3 on S-passivated Ge

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1553-1556

  Sioncke, S ^a   Ceuppens, J ^a   Lin, D ^a   Nyns, L ^a   Delabie, A ^a   Struyf, H ^a   De Gendt, S ^a,c   Muller M ^b   Beckhoff, B ^b   Caymax, M ^a  

^a IMEC   (Belgium)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Al2O3; Atomic layer deposition; Ge; S passivation

Indexed keywords

ATOMIC LAYER; CONDUCTION BAND EDGE; GATE STACKS; INTERFACIAL LAYER; S-PASSIVATION; SURFACE PASSIVATION; VALENCE BAND EDGES;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; ELECTRON MOBILITY; GERMANIUM; LOGIC GATES; OXIDANTS;

PASSIVATION;

EID: 79958032661     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.060     Document Type: Conference Paper

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