Influence of growth temperature on growth of InGaAs nanowires in selective-area metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 338, Issue 1, 2012, Pages 47-51

  Kohashi, Yoshinori ^a   Sato, Takuya ^a   Ikejiri, Keitaro ^a   Tomioka, Katsuhiro ^a,b   Hara, Shinjiroh ^a   Motohisa, Junichi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting IIIV materials; B2. Semiconducting ternary compounds

Indexed keywords

CATALYST-FREE; EXPERIMENTAL OBSERVATION; GAAS; GROWTH-TEMPERATURE DEPENDENCE; INAS; INP; METAL-ORGANIC VAPOR PHASE EPITAXY; NANOWIRE GROWTH; OPTIMUM GROWTH CONDITIONS; SELECTIVE AREA GROWTH; SELECTIVE EPITAXY; SEMI CONDUCTING III-V MATERIALS; SEMICONDUCTING TERNARY COMPOUNDS; TEMPERATURE DEPENDENCE; TEMPERATURE INCREASE; TEMPERATURE RANGE;

EPITAXIAL GROWTH; GROWTH RATE; GROWTH TEMPERATURE; INDIUM; INDIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM; TEMPERATURE DISTRIBUTION; VAPORS;

NANOWIRES;

EID: 84655169556     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.10.041     Document Type: Article

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