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Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5111-5113

SA-MOVPE of InGaAs nanowires and their compositions studied by micro-PL measurement

(5) Sato, Takuya a Kobayashi, Yasunori a Motohisa, Junichi a Hara, Shinjiro a Fukui, Takashi a

a INSTITUTO SUPERIOR TÉCNICO (Portugal)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting III V materials

Indexed keywords

CHEMICAL ANALYSIS; CRYSTAL GROWTH; ELECTRIC WIRE; LIGHT EMISSION; LUMINESCENCE; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SIMULATED ANNEALING; VAPORS;

A1. NANOSTRUCTURES; A3. METALORGANIC VAPOR-PHASE EPITAXY; A3. SELECTIVE EPITAXY; B2. SEMICONDUCTING III-V MATERIALS; GROWTH MODELS; METAL ORGANIC; PL MEASUREMENTS;

VAPOR PHASE EPITAXY;

EID: 56249128550 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.07.123 Document Type: Article

Times cited : (25)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.