Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 2359-2364

  Sato, Takuya ^a   Motohisa, Junichi ^a   Noborisaka, Jinichiro ^a   Hara, Shinjiro ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting III V materials

Indexed keywords

GROWTH RATE; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

GROWTH MECHANISMS; SELECTIVE EPITAXY;

NANOWIRES;

EID: 41449096765     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.048     Document Type: Article

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