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Volumn 20, Issue 4, 2002, Pages 1759-1765
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Surface and interface properties of In0.8Ga0.2As metal-insulator-semiconductor structures
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
ELECTRIC VARIABLES MEASUREMENT;
ENERGY GAP;
FERMI LEVEL;
GALVANOMAGNETIC EFFECTS;
HALL EFFECT;
INTERFACES (MATERIALS);
MAGNETIZATION;
NUMERICAL METHODS;
PERMITTIVITY;
SURFACE PROPERTIES;
SYNTHESIS (CHEMICAL);
AMPHOTERIC CHARGED DEFECTS;
FERMI LEVEL PINNING;
SURFACE PHOTOVOLTAGE MEASUREMENT;
WLUKIEWICZ FERMI LEVEL STABILIZATION ENERGY;
ZUNGER VACUUM PINING RULE;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
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EID: 0035982617
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1491537 Document Type: Conference Paper |
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Times cited : (3)
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References (26)
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