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Volumn 311, Issue 5, 2009, Pages 1239-1244

GdN (1 1 1) heteroepitaxy on GaN (0 0 0 1) by N2 plasma and NH3 molecular beam epitaxy

Author keywords

A3. Heteroepitaxy; A3. Molecular beam epitaxy; B1. Gadolinium compounds; B1. Rare earth compounds; B2. Magnetic materials

Indexed keywords

CRYSTAL SYMMETRY; EPITAXIAL FILMS; GADOLINIUM; GADOLINIUM COMPOUNDS; GALLIUM ALLOYS; GALLIUM NITRIDE; MAGNETIC DEVICES; MAGNETIC MATERIALS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PLASMAS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; ZINC SULFIDE;

EID: 61349127221     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.12.050     Document Type: Article
Times cited : (59)

References (34)
  • 5
    • 0038375439 scopus 로고
    • Stable and Epitaxial Contacts to III-V Compound Semiconductors
    • Brillson L.J. (Ed), Noyes Park Ridge, NJ
    • Palmstrom C.J., and Sands T. Stable and Epitaxial Contacts to III-V Compound Semiconductors. In: Brillson L.J. (Ed). Contacts to Semiconductors: Fundamentals and Technology (1993), Noyes Park Ridge, NJ 67
    • (1993) Contacts to Semiconductors: Fundamentals and Technology , pp. 67
    • Palmstrom, C.J.1    Sands, T.2
  • 17


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.