Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1721-1729

  Lucovsky, G ^a   Niimi, H ^b   Wu, Y ^b   Parker, C R ^b   Hauser, J R ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

B ATOMS; BORON ATOM; CHANNEL REGION; DEVICE RELIABILITY; DIELECTRIC LAYER; GATE ELECTRODES; LOW TEMPERATURES; LOW THERMAL BUDGET; NITROGEN ATOM; POLYCRYSTALLINE-SI; SI SUBSTRATES; SILICON NITRIDE FILM; SINGLE WAFER PROCESSING; SPATIAL DISTRIBUTION; TUNNELING CURRENT; ULTRA THIN GATE OXIDE; ULTRATHIN DIELECTRICS;

ATOMS; BORON; BORON NITRIDE; BUDGET CONTROL; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); MONOLAYERS; OXIDE FILMS; PLASMA DEPOSITION; POLYSILICON; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON NITRIDE; SILICON OXIDES; SILICON WAFERS; ULTRATHIN FILMS;

CRYSTAL ATOMIC STRUCTURE;

EID: 0001562219     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581291     Document Type: Article

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