Growth and characterization of GaN:Mn layers by MOVPE

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5025-5027

  Sofer, Zdenek ^a   Sedmidubský, David ^a   Stejskal, Josef ^a   Hejtmánek, Jiří ^b   Maryško, Miroslav ^b   Jurek, Karel ^b   Václavů, Michal ^c   Havránek, Vladimír ^d   Macková, Anna ^d  

^a INSTITUTE OF CHEMICAL TECHNOLOGY   (Czech Republic)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c CHARLES UNIVERSITY   (Czech Republic)

^d INSTITUTE OF MATHEMATICS   (Czech Republic)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Magnetic materials; B2. Semiconducting III V materials

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL GROWTH; GALLIUM NITRIDE; MAGNETIC MATERIALS; MANGANESE; MANGANESE ALLOYS; MANGANESE COMPOUNDS; NITRIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; THICK FILMS; VAPORS;

A3. METALORGANIC VAPOR-PHASE EPITAXY; B1. NITRIDES; B2. MAGNETIC MATERIALS; B2. SEMICONDUCTING III-V MATERIALS; DEPOSITED LAYERS; DEPOSITION PROCESSES; DEPOSITION TEMPERATURES; DOPING LEVELS; FERROMAGNETIC COMPONENTS; GAS PHASE; METAL ORGANIC; MN CONCENTRATIONS; N LAYERS; POSITIVE EFFECTS; ROOM TEMPERATURES;

VAPOR PHASE EPITAXY;

EID: 56549119774     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.103     Document Type: Article

References (4)

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