RF plasma sources for III-nitrides growth: Influence of operating conditions and device geometry on active species production and InN film properties

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 1, 2006, Pages 106-111

  Anderson, P A ^a   Reeves, R J ^a   Durbin, S M ^a  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC NITROGEN; FLOW RATES; MOLECULAR NITROGEN; SPECTRAL RANGE;

APPROXIMATION THEORY; LATTICE CONSTANTS; LIGHT EMISSION; NITRIDES; PLASMAS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 31144435429     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200563502     Document Type: Conference Paper

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