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Journal of Applied Physics

Volumn 107, Issue 4, 2010, Pages

Effects of (NH4)2Sx treatment on indium nitride surfaces

(6) Chang, Yuh Hwa a Lu, Yen Sheng a Hong, Yu Liang a Kuo, Cheng Tai a Gwo, Shangjr a Yeh, J Andrew a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM SULFIDE; COVALENTLY BONDED; HALL EFFECT MEASUREMENT; INDIUM NITRIDE; NATIVE OXIDES; POISSON'S EQUATION; SCANNING KELVIN PROBE MICROSCOPY; SHEET CARRIER DENSITIES; SURFACE BAND BENDING; XPS; XPS CHARACTERIZATION;

AMMONIUM COMPOUNDS; ELECTRIC RESISTANCE; ELECTRON AFFINITY; HALL EFFECT; INDIUM; INDIUM SULFIDE; MAGNETIC FIELD EFFECTS; NITRIDES; POISSON EQUATION; SULFUR;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77749252448 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3318685 Document Type: Article

Times cited : (23)

References (38)

1
- 0037451297
- 0003-6951. 10.1063/1.1562340
- H. Lu, W. J. Schaff, L. F. Eastman, and C. E. Stutz, Appl. Phys. Lett. 0003-6951 82, 1736 (2003). 10.1063/1.1562340
- (2003) Appl. Phys. Lett. , vol.82 , pp. 1736
- Lu, H.¹ Schaff, W.J.² Eastman, L.F.³ Stutz, C.E.⁴

2
- 1442355676
- 0031-9007. 10.1103/PhysRevLett.92.036804
- I. Mahboob, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 0031-9007 92, 036804 (2004). 10.1103/PhysRevLett.92.036804
- (2004) Phys. Rev. Lett. , vol.92 , pp. 036804
- Mahboob, I.¹ Veal, T.D.² McConville, C.F.³ Lu, H.⁴ Schaff, W.J.⁵

3
- 42749107344
- 0163-1829. 10.1103/PhysRevB.69.201307
- I. Mahboob, T. D. Veal, L. F. J. Piper, C. F. McConville, H. Lu, W. J. Schaff, J. Furthmüller, and F. Bechstedt, Phys. Rev. B 0163-1829 69, 201307 (2004). 10.1103/PhysRevB.69.201307
- (2004) Phys. Rev. B , vol.69 , pp. 201307
- Mahboob, I.¹ Veal, T.D.² Piper, L.F.J.³ McConville, C.F.⁴ Lu, H.⁵ Schaff, W.J.⁶ Furthmüller, J.⁷ Bechstedt, F.⁸

4
- 51649107355
- 0031-9007. 10.1103/PhysRevLett.101.106803
- C. -L. Wu, H. -M. Lee, C. -T. Kuo, C. -H. Chen, and S. Gwo, Phys. Rev. Lett. 0031-9007 101, 106803 (2008). 10.1103/PhysRevLett.101.106803
- (2008) Phys. Rev. Lett. , vol.101 , pp. 106803
- Wu, C.-L.¹ Lee, H.-M.² Kuo, C.-T.³ Chen, C.-H.⁴ Gwo, S.⁵

5
- 18544407214
- Intrinsic limitations to the doping of wide-gap semiconductors
- DOI 10.1016/S0921-4526(01)00417-3, PII S0921452601004173
- W. Walukiewicz, Physica B 0921-4526 302-303, 123 (2001). 10.1016/S0921-4526(01)00417-3 (Pubitemid 32551292)
- (2001) Physica B: Condensed Matter , vol.302-303 , pp. 123-134
- Walukiewicz, W.¹

6
- 34247235176
- Reduced surface electron accumulation at InN films by ozone induced oxidation
- DOI 10.1063/1.2721365
- V. Cimalla, V. Lebedev, Ch. Y. Wang, M. Ali, G. Ecke, V. M. Polyakov, F. Schwierz, O. Ambacher, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 0003-6951 90, 152106 (2007). 10.1063/1.2721365 (Pubitemid 46609850)
- (2007) Applied Physics Letters , vol.90 , Issue.15 , pp. 152106
- Cimalla, V.¹ Lebedev, V.² Wang, Ch.Y.³ Ali, M.⁴ Ecke, G.⁵ Polyakov, V.M.⁶ Schwierz, F.⁷ Ambacher, O.⁸ Lu, H.⁹ Schaff, W.J.¹⁰

7
- 34547439783
- Effect of surface oxidation on electron transport in InN thin films
- DOI 10.1063/1.2747592
- V. Lebedev, C. Y. Wang, V. Cimalla, S. Hauguth, M. Ali, M. Himmerlich, S. Krischok, J. A. Schaefer, O. Ambacher, V. M. Polyakov, and F. Schwierz, J. Appl. Phys. 0021-8979 101, 123705 (2007). 10.1063/1.2747592 (Pubitemid 47158124)
- (2007) Journal of Applied Physics , vol.101 , Issue.12 , pp. 123705
- Lebedev, V.¹ Wang, Ch.Y.² Cimalla, V.³ Hauguth, S.⁴ Kups, T.⁵ Ali, M.⁶ Ecke, G.⁷ Himmerlich, M.⁸ Krischok, S.⁹ Schaefer, J.A.¹⁰ Ambacher, O.¹¹ Polyakov, V.M.¹² Schwierz, F.¹³

8
- 60449096765
- 0021-8979. 10.1063/1.3073930
- A. Denisenko, C. Pietzka, A. Chuvilin, U. Kaiser, H. Lu, W. J. Schaff, and E. Kohn, J. Appl. Phys. 0021-8979 105, 033702 (2009). 10.1063/1.3073930
- (2009) J. Appl. Phys. , vol.105 , pp. 033702
- Denisenko, A.¹ Pietzka, C.² Chuvilin, A.³ Kaiser, U.⁴ Lu, H.⁵ Schaff, W.J.⁶ Kohn, E.⁷

9
- 0033905288
- 0361-5235. 10.1007/s11664-000-0072-x
- G. L. Martinez, M. R. Curiel, B. J. Skromme, and R. J. Molnar, J. Electron. Mater. 0361-5235 29, 325 (2000). 10.1007/s11664-000-0072-x
- (2000) J. Electron. Mater. , vol.29 , pp. 325
- Martinez, G.L.¹ Curiel, M.R.² Skromme, B.J.³ Molnar, R.J.⁴

10
- 0000823857
- Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment
- DOI 10.1063/1.121941, PII S0003695198043319
- R. Driad, Z. H. Lu, S. Charbonneau, W. R. McKinnon, S. Laframboise, P. J. Poole, and S. P. McAlister, Appl. Phys. Lett. 0003-6951 73, 665 (1998). 10.1063/1.121941 (Pubitemid 128673877)
- (1998) Applied Physics Letters , vol.73 , Issue.5 , pp. 665-667
- Driad, R.¹ Lu, Z.H.² Charbonneau, S.³ McKinnon, W.R.⁴ Laframboise, S.⁵ Poole, P.J.⁶ McAlister, S.P.⁷

11
- 0008190019
- 0003-6951. 10.1063/1.1331642
- Y. Dong, X. M. Ding, X. Y. Hou, Y. Li, and X. B. Li, Appl. Phys. Lett. 0003-6951 77, 3839 (2000). 10.1063/1.1331642
- (2000) Appl. Phys. Lett. , vol.77 , pp. 3839
- Dong, Y.¹ Ding, X.M.² Hou, X.Y.³ Li, Y.⁴ Li, X.B.⁵

12
- 0031170489
- 0013-4651. 10.1149/1.1837749
- H. Sik, Y. Feurprier, C. Cardinaud, G. Turban, and A. Scavennec, J. Electrochem. Soc. 0013-4651 144, 2106 (1997). 10.1149/1.1837749
- (1997) J. Electrochem. Soc. , vol.144 , pp. 2106
- Sik, H.¹ Feurprier, Y.² Cardinaud, C.³ Turban, G.⁴ Scavennec, A.⁵

13
- 0037009285
- Electrical properties of sulfur-passivated III-V compound devices
- DOI 10.1016/S0042-207X(02)00195-1, PII S0042207X02001951
- G. Eftekhari, Vacuum 0042-207X 67, 81 (2002). 10.1016/S0042-207X(02) 00195-1 (Pubitemid 34892262)
- (2002) Vacuum , vol.67 , Issue.1 , pp. 81-90
- Eftekhari, G.¹

14
- 0033480870
- 1063-7826. 10.1134/1.1187912
- N. N. Bezryadin, E. A. Tatokhin, A. V. Budanov, A. V. Linnik, and I. N. Arsent'ev, Semiconductors 1063-7826 33, 1301 (1999). 10.1134/1.1187912
- (1999) Semiconductors , vol.33 , pp. 1301
- Bezryadin, N.N.¹ Tatokhin, E.A.² Budanov, A.V.³ Linnik, A.V.⁴ Arsent'Ev, I.N.⁵

15
- 0001198954
- 0003-6951. 10.1063/1.125152
- T. A. Tanzer, P. W. Bohn, I. V. Roshchin, L. H. Greene, and J. F. Klem, Appl. Phys. Lett. 0003-6951 75, 2794 (1999). 10.1063/1.125152
- (1999) Appl. Phys. Lett. , vol.75 , pp. 2794
- Tanzer, T.A.¹ Bohn, P.W.² Roshchin, I.V.³ Greene, L.H.⁴ Klem, J.F.⁵

16
- 0141993747
- 0039-6028. 10.1016/j.susc.2003.08.047
- M. J. Lowe, T. D. Veal, A. P. Mowbray, and C. F. McConville, Surf. Sci. 0039-6028 544, 320 (2003). 10.1016/j.susc.2003.08.047
- (2003) Surf. Sci. , vol.544 , pp. 320
- Lowe, M.J.¹ Veal, T.D.² Mowbray, A.P.³ McConville, C.F.⁴

17
- 0037454641
- 0039-6028. 10.1016/S0039-6028(02)02411-1
- D. Y. Petrovykh, M. J. Yang, and L. J. Whitman, Surf. Sci. 0039-6028 523, 231 (2003). 10.1016/S0039-6028(02)02411-1
- (2003) Surf. Sci. , vol.523 , pp. 231
- Petrovykh, D.Y.¹ Yang, M.J.² Whitman, L.J.³

18
- 34247200037
- 10.1002/pssc.200303489
- T. Maruyama, K. Yorozu, T. Noguchi, Y. Seki, Y. Saito, T. Araki, and Y. Nanishi, Phys. Status Solidi C 7, 2031 (2003). 10.1002/pssc.200303489
- (2003) Phys. Status Solidi C , vol.7 , pp. 2031
- Maruyama, T.¹ Yorozu, K.² Noguchi, T.³ Seki, Y.⁴ Saito, Y.⁵ Araki, T.⁶ Nanishi, Y.⁷

19
- 34047160138
- Effects of surface treatments on hexagonal InN films grown on sapphire substrates
- DOI 10.1116/1.2387161
- L. Cao, Z. L. Xie, B. Liu, X. Q. Xiu, R. Zhang, and Y. D. Zheng, J. Vac. Sci. Technol. B 1071-1023 25, 199 (2007). 10.1116/1.2387161 (Pubitemid 46512026)
- (2007) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.25 , Issue.1 , pp. 199-201
- Cao, L.¹ Xie, Z.L.² Liu, B.³ Xiu, X.Q.⁴ Zhang, R.⁵ Zheng, Y.D.⁶

20
- 2942601794
- 0003-6951 10.1063/1.1738183
- S. Gwo, C. -L. Wu, C. -H. Shen, W. -H. Chang, T. M. Hsu, J. -S. Wang, and J. -T. Hsu, Appl. Phys. Lett. 0003-6951 84, 3765 (2004) 10.1063/1.1738183;
- (2004) Appl. Phys. Lett. , vol.84 , pp. 3765
- Gwo, S.¹ Wu, -L.C.² Shen, -H.C.³ Chang, -H.W.⁴ Hsu, T.M.⁵ Wang, -S.J.⁶ Hsu, -T.J.⁷

21
- 28844499462
- 0003-6951 10.1063/1.2146062
- C. -L. Wu, C. -H. Shen, H. -W. Lin, H. -M. Lee, and S. Gwo, Appl. Phys. Lett. 0003-6951 87, 241916 (2005). 10.1063/1.2146062
- (2005) Appl. Phys. Lett. , vol.87 , pp. 241916
- Wu, -L.C.¹ Shen, -H.C.² Lin, -W.H.³ Lee, -M.H.⁴ Gwo, S.⁵

22
- 34547535147
- 0163-1829. 10.1103/PhysRevB.76.041303
- J. W. L. Yim, R. E. Jones, K. M. Yu, J. W. Ager, W. Walukiewicz, W. J. Schaff, and J. Wu, Phys. Rev. B 0163-1829 76, 041303 (2007). 10.1103/PhysRevB.76.041303
- (2007) Phys. Rev. B , vol.76 , pp. 041303
- Yim, J.W.L.¹ Jones, R.E.² Yu, K.M.³ Ager, J.W.⁴ Walukiewicz, W.⁵ Schaff, W.J.⁶ Wu, J.⁷

23
- 34548442895
- Universality of electron accumulation at wurtzite c - And a -plane and zinc-blende InN surfaces
- DOI 10.1063/1.2775807
- P. D. C. King, T. D. Veal, C. F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, P. Schley, R. Goldhahn, J. Schörmann, D. J. As, K. Lischka, D. Muto, H. Naoi, Y. Nanishi, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 0003-6951 91, 092101 (2007). 10.1063/1.2775807 (Pubitemid 47352287)
- (2007) Applied Physics Letters , vol.91 , Issue.9 , pp. 092101
- King, P.D.C.¹ Veal, T.D.² McConville, C.F.³ Fuchs, F.⁴ Furthmuller, J.⁵ Bechstedt, F.⁶ Schley, P.⁷ Goldhahn, R.⁸ Schormann, J.⁹ As, D.J.¹⁰ Lischka, K.¹¹ Muto, D.¹² Naoi, H.¹³ Nanishi, Y.¹⁴ Lu, H.¹⁵ Schaff, W.J.¹⁶

24
- 0029342810
- 0039-6028. 10.1016/0039-6028(95)00306-1
- T. Chasś, H. Peisert, P. Streubel, and R. Szargan, Surf. Sci. 0039-6028 331-333, 434 (1995). 10.1016/0039-6028(95)00306-1
- (1995) Surf. Sci. , vol.331-333 , pp. 434
- Chasś, T.¹ Peisert, H.² Streubel, P.³ Szargan, R.⁴

25
- 24444454304
- 0031-9007. 10.1103/PhysRevLett.35.1803
- P. Mengel, P. M. Grant, W. E. Rudge, B. H. Schechtman, and D. W. Rice, Phys. Rev. Lett. 0031-9007 35, 1803 (1975). 10.1103/PhysRevLett.35.1803
- (1975) Phys. Rev. Lett. , vol.35 , pp. 1803
- Mengel, P.¹ Grant, P.M.² Rudge, W.E.³ Schechtman, B.H.⁴ Rice, D.W.⁵

26
- 0035274822
- 0361-5235. 10.1007/s11664-001-0011-5
- J. K. Kim, C. C. Kim, T. S. Cho, J. H. Je, J. S. Kwak, Y. J. Park, and J. L. Lee, J. Electron. Mater. 0361-5235 30, 170 (2001). 10.1007/s11664-001-0011-5
- (2001) J. Electron. Mater. , vol.30 , pp. 170
- Kim, J.K.¹ Kim, C.C.² Cho, T.S.³ Je, J.H.⁴ Kwak, J.S.⁵ Park, Y.J.⁶ Lee, J.L.⁷

27
- 39149103990
- 0039-6028. 10.1016/j.susc.2007.12.026
- P. D. C. King, T. D. Veal, H. Lu, S. A. Hatfield, W. J. Schaff, and C. F. McConville, Surf. Sci. 0039-6028 602, 871 (2008). 10.1016/j.susc.2007.12.026
- (2008) Surf. Sci. , vol.602 , pp. 871
- King, P.D.C.¹ Veal, T.D.² Lu, H.³ Hatfield, S.A.⁴ Schaff, W.J.⁵ McConville, C.F.⁶

28
- 29744455481
- Clean wurtzite InN surfaces prepared with atomic hydrogen
- DOI 10.1116/1.1927108
- L. F. J. Piper, T. D. Veal, M. Walker, I. Mahboob, C. F. McConville, H. Lu, and W. J. Schaff, J. Vac. Sci. Technol. A 0734-2101 23, 617 (2005). 10.1116/1.1927108 (Pubitemid 43123911)
- (2005) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.23 , Issue.4 , pp. 617-620
- Piper, L.F.J.¹ Veal, T.D.² Walker, M.³ Mahboob, I.⁴ McConville, C.F.⁵ Lu, H.⁶ Schaff, W.J.⁷

29
- 0036508390
- Deposition of an InN thin film by a r.f. plasma-assisted reactive ion-beam sputtering deposition (R-IBSD) technique
- DOI 10.1016/S0925-9635(01)00679-3, PII S0925963501006793, Proceedings of Diamond 2001, the 12th Conference on Diamond, Diamond-like materials, Carbon Nanotubes, Nitrides and Silicon Carbide
- H. Shinoda and N. Mutsukura, Diamond Relat. Mater. 0925-9635 11, 896 (2002). 10.1016/S0925-9635(01)00679-3 (Pubitemid 34696371)
- (2002) Diamond and Related Materials , vol.11 , Issue.3-6 , pp. 896-900
- Shinoda, H.¹ Mutsukura, N.²

30
- 4043099222
- 1089-5647. 10.1021/jp048112q
- R. Nakamura, T. Tanaka, and Y. Nakato, J. Phys. Chem. B 1089-5647 108, 10617 (2004). 10.1021/jp048112q
- (2004) J. Phys. Chem. B , vol.108 , pp. 10617
- Nakamura, R.¹ Tanaka, T.² Nakato, Y.³

31
- 0034836146
- 3 on Ti/Si(1 0 0)
- DOI 10.1016/S0169-4332(00)00896-5
- H. L. Siew, M. H. Qiao, C. H. Chew, K. F. Mok, L. Chan, and G. Q. Xu, Appl. Surf. Sci. 0169-4332 173, 95 (2001). 10.1016/S0169-4332(00)00896-5 (Pubitemid 32875172)
- (2001) Applied Surface Science , vol.173 , Issue.1-2 , pp. 95-102
- Siew, H.L.¹ Qiao, M.H.² Chew, C.H.³ Mok, K.F.⁴ Chan, L.⁵ Xu, G.Q.⁶

32
- 33750316327
- Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces
- DOI 10.1209/epl/i2006-10250-2
- D. Segev and C. G. Van de Walle, Europhys. Lett. 0295-5075 76, 305 (2006) 10.1209/epl/i2006-10250-2; (Pubitemid 44620860)
- (2006) Europhysics Letters , vol.76 , Issue.2 , pp. 305-311
- Segev, D.¹ Van De Walle, C.G.²

33
- 34247863807
- Microscopic origins of surface states on nitride surfaces
- DOI 10.1063/1.2722731
- C. G. Van de Walle and D. Segev, J. Appl. Phys. 0021-8979 101, 081704 (2007). 10.1063/1.2722731 (Pubitemid 46691125)
- (2007) Journal of Applied Physics , vol.101 , Issue.8 , pp. 081704
- Van De Walle, C.G.¹ Segev, D.²

34
- 77749303841
- Else1vier, Amsterdam
- C. E. Nebel and J. Ristein, Thin-Film Diamond II, Semiconductors and Semimetals (Else1vier, Amsterdam, 2004) Vol. 77.
- (2004) Thin-Film Diamond II, Semiconductors and Semimetals , vol.77
- Nebel, C.E.¹ Ristein, J.²

35
- 0000887487
- 0021-8979. 10.1063/1.371858
- M. V. Lebedev and M. Aono, J. Appl. Phys. 0021-8979 87, 289 (2000). 10.1063/1.371858
- (2000) J. Appl. Phys. , vol.87 , pp. 289
- Lebedev, M.V.¹ Aono, M.²

36
- 17944378843
- Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures
- DOI 10.1063/1.1869535, 112115
- B. J. Rodriguez, W. -C. Yang, R. J. Nemanich, and A. Gruverman, Appl. Phys. Lett. 0003-6951 86, 112115 (2005). 10.1063/1.1869535 (Pubitemid 40597021)
- (2005) Applied Physics Letters , vol.86 , Issue.11 , pp. 1-3
- Rodriguez, B.J.¹ Yang, W.-C.² Nemanich, R.J.³ Gruverman, A.⁴

37
- 0030564342
- x passivated InP surface by rapid thermal annealing
- DOI 10.1016/0169-4332(96)00345-5, PII S0169433296003455
- W. D. Chen, X. Q. Li, L. H. Duan, X. L. Xie, and Y. D. Cui, Appl. Surf. Sci. 0169-4332 100-101, 592 (1996). 10.1016/0169-4332(96)00345-5 (Pubitemid 126357867)
- (1996) Applied Surface Science , vol.100-101 , pp. 592-595
- Chen, W.D.¹ Li, X.Q.² Duan, L.H.³ Xie, X.L.⁴ Cui, Y.D.⁵

38
- 0000802656
- 1071-1023. 10.1116/1.588827
- V. N. Bessolov, E. V. Konenkova, and M. V. Lebedeva, J. Vac. Sci. Technol. B 1071-1023 14, 2761 (1996). 10.1116/1.588827
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 2761
- Bessolov, V.N.¹ Konenkova, E.V.² Lebedeva, M.V.³

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