Evidence for room temperature ferromagnetism in the In1-xCrxN system

Current Applied Physics

Volumn 6, Issue 3, 2006, Pages 579-582

  Kinsey, R J ^a   Anderson, P A ^a   Liu, Z ^b   Ringer, S ^b   Durbin, S M ^a  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

^b UNIVERSITY OF SYDNEY   (Australia)

Author keywords

Dilute magnetic semiconductor (DMS); Indium nitride (InN); Molecular beam epitaxy (MBE)

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; FERROMAGNETISM; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY;

DILUTE MAGNETIC SEMICONDUCTOR (DMS); ELECTRON CONCENTRATION; INDIUM NITRIDE (INN); INTERSTITIAL SITES;

INDIUM COMPOUNDS;

EID: 33744549203     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2005.11.065     Document Type: Article

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