Molecular beam epitaxy of p-type cubic GaMnN layers

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 685-689

  Foxon, C T ^a   Novikov, S V ^a   Zhao, L X ^a   Edmonds, K W ^a   Giddings, A D ^a   Wang, K Y ^a   Campion, R P ^a   Staddon, C R ^a   Fay, M W ^a   Han, Y ^a   Brown, P D ^a   Sawicki, M ^b   Gallagher, B L ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ELECTRIC PROPERTIES; ELECTRONIC EQUIPMENT; MANGANESE; MOLECULAR BEAM EPITAXY; NITRIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR DOPING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CURIE TEMPERATURE; DATA STORAGE; SEMICONDUCTOR III-V MATERIAL; SPINTRONIC DEVICES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 21044446376     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.112     Document Type: Conference Paper

References (4)

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2. T. Dietl Semicond. Sci. Technol. 17 2002 377
3. D.J. As, D. Schikora, and K. Lischka Phys. Status Solidi c 0 2003 1607
4. S.V. Novikov, K.W. Edmonds, A.D. Giddings, K.Y. Wang, C.R. Staddon, R.P. Campion, B.L. Gallagher, and C.T. Foxon Semicond. Sci. Technol. 19 2004 L13