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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1213-1216

InAs-based bipolar transistors grown by molecular beam epitaxy

(5) Averett, K L a,b Maimon, S c Wu, X a Koch, M W c Wicks, G W c

a UNIVERSITY OF ROCHESTER (United States)

b AIR FORCE RESEARCH LABORATORY (United States)

c UNIVERSITY OF ROCHESTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ENERGY GAP; ETCHING; FERMI LEVEL; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

BIPOLAR JUNCTION TRANSISTORS (BJT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035998577 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1459461 Document Type: Conference Paper

Times cited : (9)

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