MBE growth and properties of InN-based dilute magnetic semiconductors

Journal of Crystal Growth

Volumn 269, Issue 1, 2004, Pages 66-71

  Chen, P P ^a,b   Makino, H ^a   Yao, T ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1.Nitrides; B2. Magnetic materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; MAGNETIC MATERIALS; MOLECULAR BEAM EPITAXY; NITRIDES; OPTOELECTRONIC DEVICES; PARAMAGNETISM; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

ATOMIC CONCENTRATION; CURIE TEMPERATURE; DILUTE MAGNETIC SEMICONDUCTORS (DMS); SPINTRONIC DEVICES;

MAGNETIC SEMICONDUCTORS;

EID: 3342988350     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.073     Document Type: Conference Paper

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