Structural and magnetic behavior of transition metal doped InN grown by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1644-1648

  Rajaram, R ^c   Ney, A ^c   Farrow, R F C ^a   Parkin, S S P ^a   Solomon, G S ^b   Harris Jr , J S ^b  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b STANFORD UNIVERSITY   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

LATTICE MISMATCH; MAGNETIC BEHAVIOR; PHASE SEGREGATION; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

MAGNETIC PROPERTIES; MOLECULAR BEAM EPITAXY; PARAMAGNETISM; PLASMAS; QUANTUM INTERFERENCE DEVICES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSITION METALS; X RAY DIFFRACTION;

MAGNETIC THIN FILMS;

EID: 33744819738     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2192537     Document Type: Article

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