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Applied Physics Letters

Volumn 99, Issue 23, 2011, Pages

Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier

(6) Sheng Xia, Chang a Simon Li, Z M a Lu, Wei b Hua Zhang, Zhi c Sheng, Yang a Wen Cheng, Li b

a Crosslight Software Inc China Branch (China)

b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

c TONGJI UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CONFINEMENT; FORWARD VOLTAGE; GROWTH DIRECTIONS; HOLE INJECTION; INGAN/GAN; POTENTIAL WELLS;

GALLIUM NITRIDE; INDIUM; LIGHT EMISSION; LIGHT EMITTING DIODES; PLASMA CONFINEMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 83455228499 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3665252 Document Type: Article

Times cited : (67)

References (28)

1
- 0033309549
- 10.1143/JJAP.38.3976
- T. Mukai, M. Yamada, and S. Nakamura, Jpn. J. Appl. Phys., Part 1 38, 3976 (1999). 10.1143/JJAP.38.3976
- (1999) Jpn. J. Appl. Phys., Part 1 , vol.38 , pp. 3976
- Mukai, T.¹ Yamada, M.² Nakamura, S.³

2
- 46649095826
- 10.1109/TED.2008.923561
- Y. Yang, X. A. Cao, and C. Yan, IEEE Trans. Electron Devices 55, 1771 (2008). 10.1109/TED.2008.923561
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 1771
- Yang, Y.¹ Cao, X.A.² Yan, C.³

3
- 76749099881
- 10.1063/1.3302466
- W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska, Appl. Phys. Lett. 96, 061102 (2010). 10.1063/1.3302466
- (2010) Appl. Phys. Lett. , vol.96 , pp. 061102
- Sun, W.¹ Shatalov, M.² Deng, J.³ Hu, X.⁴ Yang, J.⁵ Lunev, A.⁶ Bilenko, Y.⁷ Shur, M.⁸ Gaska, R.⁹

4
- 67649993974
- 10.1002/pssa.200880961
- H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, Phys. Status Solidi A 206, 1176 (2009). 10.1002/pssa.200880961
- (2009) Phys. Status Solidi A , vol.206 , pp. 1176
- Hirayama, H.¹ Fujikawa, S.² Noguchi, N.³ Norimatsu, J.⁴ Takano, T.⁵ Tsubaki, K.⁶ Kamata, N.⁷

5
- 35648977539
- Origin of efficiency droop in GaN-based light-emitting diodes
- DOI 10.1063/1.2800290
- M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. 91, 183507 (2007). 10.1063/1.2800290 (Pubitemid 350037243)
- (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 183507
- Kim, M.-H.¹ Schubert, M.F.² Dai, Q.³ Kim, J.K.⁴ Schubert, E.F.⁵ Piprek, J.⁶ Park, Y.⁷

6
- 33745616096
- Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density
- DOI 10.1134/S1063782606070190
- I. V. Rozhansky and D. A. Zakheim, Semiconductors 40, 839 (2006). 10.1134/S1063782606070190 (Pubitemid 43982526)
- (2006) Semiconductors , vol.40 , Issue.7 , pp. 839-845
- Rozhansky, I.V.¹ Zakheim, D.A.²

7
- 67649126477
- 10.1063/1.3153508
- S. H. Han, D. Y. Lee, S. J. Lee, C. Y. Cho, M. K. Kwon, S. P. Lee, D. Y. Noh, D. J. Kim, Y. C. Kim, and S. J. Park, Appl. Phys. Lett. 94, 231123 (2009). 10.1063/1.3153508
- (2009) Appl. Phys. Lett. , vol.94 , pp. 231123
- Han, S.H.¹ Lee, D.Y.² Lee, S.J.³ Cho, C.Y.⁴ Kwon, M.K.⁵ Lee, S.P.⁶ Noh, D.Y.⁷ Kim, D.J.⁸ Kim, Y.C.⁹ Park, S.J.¹⁰

8
- 49149091530
- 10.1063/1.2963029
- M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, Appl. Phys. Lett. 93, 041102 (2008). 10.1063/1.2963029
- (2008) Appl. Phys. Lett. , vol.93 , pp. 041102
- Schubert, M.F.¹ Xu, J.² Kim, J.K.³ Schubert, E.F.⁴ Kim, M.H.⁵ Yoon, S.⁶ Lee, S.M.⁷ Sone, C.⁸ Sakong, T.⁹ Park, Y.¹⁰

9
- 77649142053
- 10.1109/LPT.2010.2040075
- M. C. Tsai, S. H. Yen, and Y. K. Kuo, IEEE Photonics Technol. Lett. 22, 374 (2010). 10.1109/LPT.2010.2040075
- (2010) IEEE Photonics Technol. Lett. , vol.22 , pp. 374
- Tsai, M.C.¹ Yen, S.H.² Kuo, Y.K.³

10
- 77951536279
- 10.1109/JQE.2010.2045104
- Y. K. Kuo, M. C. Tsai, S. H. Yen, T. C. Hsu, and Y. J. Shen, IEEE J. Quantum Electron. 46, 1214 (2010). 10.1109/JQE.2010.2045104
- (2010) IEEE J. Quantum Electron. , vol.46 , pp. 1214
- Kuo, Y.K.¹ Tsai, M.C.² Yen, S.H.³ Hsu, T.C.⁴ Shen, Y.J.⁵

11
- 80052012631
- 10.1143/JJAP.50.080212
- Z. Li, M. Lestrade, Y. Xiao, and Z. S. Li, Jpn. J. Appl. Phys. 50, 080212 (2011). 10.1143/JJAP.50.080212
- (2011) Jpn. J. Appl. Phys. , vol.50 , pp. 080212
- Li, Z.¹ Lestrade, M.² Xiao, Y.³ Li, Z.S.⁴

12
- 79952942735
- F. 10.1117/12.874909
- T. H. Wang, J. Y. Chang, M. C. Tsai, and Y. K. Kuo, Proc. SPIE 7954, 79541 F (2011). 10.1117/12.874909
- (2011) Proc. SPIE , vol.7954 , pp. 79541
- Wang, T.H.¹ Chang, J.Y.² Tsai, M.C.³ Kuo, Y.K.⁴

13
- 78650917139
- 10.1063/1.3531753
- C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, Appl. Phys. Lett. 97, 261103 (2010). 10.1063/1.3531753
- (2010) Appl. Phys. Lett. , vol.97 , pp. 261103
- Wang, C.H.¹ Ke, C.C.² Lee, C.Y.³ Chang, S.P.⁴ Chang, W.T.⁵ Li, J.C.⁶ Li, Z.Y.⁷ Yang, H.C.⁸ Kuo, H.C.⁹ Lu, T.C.¹⁰ Wang, S.C.¹¹

14
- 79960596151
- 10.1063/1.3601469
- L. Zhang, X. C. Wei, N. X. Liu, H. X. Lu, J. P. Zeng, J. X. Wang, Y. P. Zeng, and J. M. Li, Appl. Phys. Lett. 98, 241111 (2011). 10.1063/1.3601469
- (2011) Appl. Phys. Lett. , vol.98 , pp. 241111
- Zhang, L.¹ Wei, X.C.² Liu, N.X.³ Lu, H.X.⁴ Zeng, J.P.⁵ Wang, J.X.⁶ Zeng, Y.P.⁷ Li, J.M.⁸

15
- 78650984519
- 10.1109/LPT.2010.2091119
- M. C. Tsai, S. H. Yen, Y. C. Lu, and Y. K. Kuo, IEEE Photonics Technol. Lett. 23, 76 (2011). 10.1109/LPT.2010.2091119
- (2011) IEEE Photonics Technol. Lett. , vol.23 , pp. 76
- Tsai, M.C.¹ Yen, S.H.² Lu, Y.C.³ Kuo, Y.K.⁴

16
- 78649440391
- 10.1109/LPT.2010.2085427
- S. H. Yen, M. L. Tsai, M. C. Tsai, S. J. Chang, and Y. K. Kuo, IEEE Photonics Technol. Lett. 22, 1787 (2010). 10.1109/LPT.2010.2085427
- (2010) IEEE Photonics Technol. Lett. , vol.22 , pp. 1787
- Yen, S.H.¹ Tsai, M.L.² Tsai, M.C.³ Chang, S.J.⁴ Kuo, Y.K.⁵

17
- 79959407365
- 10.1063/1.3591967
- P. M. Tu, C. Y. Chang, S. C. Huang, C. H. Chiu, J. R. Chang, W. T. Chang, D. S. Wuu, H. W. Zan, C. C. Lin, H. C. Kuo, and C. P. Hsu, Appl. Phys. Lett. 98, 211107 (2011). 10.1063/1.3591967
- (2011) Appl. Phys. Lett. , vol.98 , pp. 211107
- Tu, P.M.¹ Chang, C.Y.² Huang, S.C.³ Chiu, C.H.⁴ Chang, J.R.⁵ Chang, W.T.⁶ Wuu, D.S.⁷ Zan, H.W.⁸ Lin, C.C.⁹ Kuo, H.C.¹⁰ Hsu, C.P.¹¹

18
- 67650504960
- 10.1063/1.3176406
- Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, Appl. Phys. Lett. 95, 011116 (2009). 10.1063/1.3176406
- (2009) Appl. Phys. Lett. , vol.95 , pp. 011116
- Kuo, Y.K.¹ Chang, J.Y.² Tsai, M.C.³ Yen, S.H.⁴

19
- 77954932153
- 10.1364/OL.35.001368
- J. Y. Chang, M. C. Tsai, and Y. K. Kuo, Opt. Lett. 35, 1368 (2010). 10.1364/OL.35.001368
- (2010) Opt. Lett. , vol.35 , pp. 1368
- Chang, J.Y.¹ Tsai, M.C.² Kuo, Y.K.³

20
- 67650698547
- 10.1109/LPT.2009.2021155
- S. H. Yen, M. C. Tsai, M. L. Tsai, Y. J. Shen, T. C. Hsu, and Y. K. Kuo, IEEE Photonics Technol. Lett. 21, 975 (2009). 10.1109/LPT.2009.2021155
- (2009) IEEE Photonics Technol. Lett. , vol.21 , pp. 975
- Yen, S.H.¹ Tsai, M.C.² Tsai, M.L.³ Shen, Y.J.⁴ Hsu, T.C.⁵ Kuo, Y.K.⁶

21
- 38949146387
- Carrier distribution in (0001) InGaNGaN multiple quantum well light-emitting diodes
- DOI 10.1063/1.2839305
- A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, Appl. Phys. Lett. 92, 053502 (2008). 10.1063/1.2839305 (Pubitemid 351230052)
- (2008) Applied Physics Letters , vol.92 , Issue.5 , pp. 053502
- David, A.¹ Grundmann, M.J.² Kaeding, J.F.³ Gardner, N.F.⁴ Mihopoulos, T.G.⁵ Krames, M.R.⁶

22
- 47549085538
- 10.1063/1.2957667
- J. P. Liu, J.-H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, and H. B. Wang, Appl. Phys. Lett. 93, 021102 (2008). 10.1063/1.2957667
- (2008) Appl. Phys. Lett. , vol.93 , pp. 021102
- Liu, J.P.¹ Ryou, J.-H.² Dupuis, R.D.³ Han, J.⁴ Shen, G.D.⁵ Wang, H.B.⁶

23
- 84855205677
- See for more information about APSYS by Crosslight Software Inc., Burnaby, Canada.
- See http://www.crosslight.com for more information about APSYS by Crosslight Software Inc., Burnaby, Canada.

24
- 35148864428
- Auger recombination in InGaN measured by photoluminescence
- DOI 10.1063/1.2785135
- Y. C. Shen, G. O. Mueller, S. Watanahe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. 91, 141101 (2007). 10.1063/1.2785135 (Pubitemid 47534188)
- (2007) Applied Physics Letters , vol.91 , Issue.14 , pp. 141101
- Shen, Y.C.¹ Mueller, G.O.² Watanabe, S.³ Gardner, N.F.⁴ Munkholm, A.⁵ Krames, M.R.⁶

25
- 79956053005
- Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures
- DOI 10.1063/1.1448668
- V. Fiorentini, F. Bernardini, and O. Ambacher, Appl. Phys. Lett. 80, 1204 (2002). 10.1063/1.1448668 (Pubitemid 34180526)
- (2002) Applied Physics Letters , vol.80 , Issue.7 , pp. 1204
- Fiorentini, V.¹ Bernardini, F.² Ambacher, O.³

26
- 79951772113
- 10.1007/s11082-011-9437-z
- J. Piprek and S. Li, Opt. Quantum Electron. 42, 89 (2010). 10.1007/s11082-011-9437-z
- (2010) Opt. Quantum Electron. , vol.42 , pp. 89
- Piprek, J.¹ Li, S.²

27
- 33947267509
- Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects
- DOI 10.1007/s11082-006-9029-5, Special Issue on Numerical Simulation of Optoelectronic Devices
- C. S. Xia, W. D. Hu, C. Wang, Z. F. Li, X. S. Chen, W. Lu, Z. M. Simon Li, and Z. Q. Li, Opt. Quantum Electron. 38, 1077 (2006). 10.1007/s11082-006- 9029-5 (Pubitemid 46433445)
- (2006) Optical and Quantum Electronics , vol.38 , Issue.12-14 , pp. 1077-1089
- Xia, C.S.¹ Hu, W.D.² Wang, C.³ Li, Z.F.⁴ Chen, X.S.⁵ Lu, W.⁶ Li, Z.M.S.⁷ Li, Z.Q.⁸

28
- 74849093968
- 10.1126/science.1183226
- J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, Science 327, 60 (2010). 10.1126/science.1183226
- (2010) Science , vol.327 , pp. 60
- Simon, J.¹ Protasenko, V.² Lian, C.³ Xing, H.⁴ Jena, D.⁵

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