Numerical study of blue InGaN light-emitting diodes with varied barrier thicknesses

IEEE Photonics Technology Letters

Volumn 23, Issue 2, 2011, Pages 76-78

  Tsai, Miao Chan ^a   Yen, Sheng Horng ^b   Lu, Ying Chung ^a   Kuo, Yen Kuang ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

InGaN; internal quantum efficiency; light emitting diodes (LEDs); multiquantum well

Indexed keywords

BARRIER THICKNESS; CARRIER DISTRIBUTIONS; ELECTRON LEAKAGE; HIGH INJECTION; HOLE INJECTION; INGAN; INTERNAL QUANTUM EFFICIENCY; LIGHT-EMITTING DIODES (LEDS); MULTIQUANTUM WELLS; NUMERICAL INVESTIGATIONS; NUMERICAL STUDIES; ORIGINAL STRUCTURES; QUANTUM WELL; RADIATIVE RECOMBINATION; SIMULATION APPROACH;

DIODES; ELECTRON INJECTION; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 78650984519     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2091119     Document Type: Article

References (12)

1. M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, "Status and future of high-power light-emitting diodes for solid-state lighting," IEEE J. Display Technol., vol. 3, no. 2, pp. 160-175, Jun. 2007.
2. J. Piprek, "Efficiency droop in nitride-based light-emitting diodes," Phys. Status Solidi A Jul. 2010, 10.1002/pssa.201026149.
3. K. A. Bulashevich, I. Y. Evstratov, V. F. Mymrin, and S. Y. Karpov, "Current spreading and thermal effects in blue LED dice," Phys. Stat. Sol. C, vol. 4, pp. 45-48 Jan. 2007.
4. Y.-L. Li, Y.-R. Huang, and Y.-H. Lai, "Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness," Appl. Phys. Lett., vol. 9, pp. 1181113-1-181113-3, Oct. 2007.
5. M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, "Effect of dislocation density on efficiency droop in GaInN/GaN lightemitting diodes," Appl. Phys. Lett., vol. 91, pp. 231114-1-231114-3, Dec. 2007.
6. Y. C. Shen, G. O. Mueller, S.Watanabe, N. F. Gardner, A.Munkholm, and M. R. Krames, "Auger recombination in InGaN measured by photoluminescence, " Appl. Phys. Lett., vol. 91, pp. 141101-1-141101-3, Oct. 2007.
7. A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Y. T. Rebane, D. V. Tarkhin, and Y. G. Shreter, "Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs," Semiconductors, vol. 40, no. 5, pp. 605-610, 2006.
8. Y.-K. Kuo, M.-C. Tsai, S.-H. Yen, T.-C. Hsu, and Y.-J. Shen, "Enhancement of light power for blue InGaN light-emitting diodes by using low-indium-content InGaN barriers," IEEE J. Sel. Topics Quantum Electron., vol. 15, no. 4, pp. 1115-1121, Jul./Aug. 2009.
9. X. Ni, Q. Fan, R. Shimada, Ü. Özgür, and H. Morkoc, "Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells," Appl. Phys. Lett., vol. 93, pp. 171113-1-171113-3, Sep. 2008.
10. J.-Y. Zhang, L.-E. Cai, B.-P. Zhang, X.-L. Hu, F. Jiang, J.-Z. Yu, and Q.-M. Wang, "Efficient hole transport in asymmetric coupled InGaN multiple quantum wells," Appl. Phys. Lett., vol. 95, pp. 161110-1-161110-3, Oct. 2009.
11. APSYS Crosslight Software Inc., Burnaby, Canada.
12. S.-H. Yen, M.-C. Tsai, M.-L. Tsai, Y.-J. Shen, T.-C. Hsu, and Y.-K. Kuo, "Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes," Appl. Phys. A, Mater. Sci. Process., vol. 97, pp. 705-708, Jun. 2009.