Investigation of optical performance of InGaN MQW LED with thin last barrier

IEEE Photonics Technology Letters

Volumn 22, Issue 24, 2010, Pages 1787-1789

  Yen, Sheng Horng ^a   Tsai, Meng Lun ^a   Tsai, Miao Chan ^b   Chang, Shu Jeng ^b   Kuo, Yen Kuang ^b  

^a EPISTAR CORPORATION   (Taiwan)

^b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

Light emitting diodes (LEDs); quantum wells (QWs); semiconductor devices

Indexed keywords

ACTIVE REGIONS; BARRIER THICKNESS; EXPERIMENTAL MEASUREMENTS; HOLE INJECTION; INGAN LED; OPTICAL PERFORMANCE; OPTICAL POWER; QUANTUM WELL; RADIATIVE RECOMBINATION; SIMULATION ANALYSIS;

DIODES; ELECTRON INJECTION; HOLE TRAPS; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR SWITCHES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78649440391     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2085427     Document Type: Article

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