Improvement of performance in p-side down InGaN/GaN light-emitting diodes with graded electron blocking layer

Japanese Journal of Applied Physics

Volumn 50, Issue 8 PART 1, 2011, Pages

  Li, Zhiqiang ^a   Lestrade, Michel ^a   Xiao, Yegao ^a   Li, Zhanming Simon ^a  

^a Crosslight Software Inc   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; DOPING DENSITIES; ELECTRON BLOCKING LAYER; ELECTRON OVERFLOW; FINITE ELEMENT SIMULATIONS; HOLE INJECTION; INGAN/GAN; LIGHT POWER; P-TYPE DOPING;

LIGHT EMISSION;

LIGHT EMITTING DIODES;

EID: 80052012631     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.080212     Document Type: Article

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