Efficiency droop in 245-247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

Applied Physics Letters

Volumn 96, Issue 6, 2010, Pages

  Sun, W ^a   Shatalov, M ^a   Deng, J ^a   Hu, X ^a   Yang, J ^a   Lunev, A ^a   Bilenko, Y ^a   Shur, M ^a,b   Gaska, R ^a  

^a SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; AUGER RECOMBINATION; BARRIER LAYERS; CLADDING LAYER; CONTINUOUS WAVE; CONTINUOUS WAVE OUTPUT POWER; CW OPERATION; DEEP ULTRAVIOLET; EXTERNAL EFFICIENCY; EXTERNAL QUANTUM EFFICIENCY; HIGH CURRENTS; MW OUTPUT; P-TYPE; PEAK EMISSION WAVELENGTH; ROOM TEMPERATURE; SELF-HEATING; SEMIEMPIRICAL EQUATION; TURN ON VOLTAGE;

LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM DOTS;

DIODES;

EID: 76749099881     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3302466     Document Type: Article

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