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Volumn 98, Issue 24, 2011, Pages

Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition

(8) Zhang, L a Wei, X C a Liu, N X a Lu, H X a Zeng, J P a Wang, J X a Zeng, Y P a Li, J M a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; ALGAN; ELECTROLUMINESCENCE INTENSITY; EXTERNAL QUANTUM EFFICIENCY; HOLE INJECTION; INTERNAL QUANTUM EFFICIENCY; SIMULATED RESULTS;

EFFICIENCY; GALLIUM NITRIDE; HOLE CONCENTRATION; LIGHT; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC LIGHT EMITTING DIODES (OLED); POLARIZATION;

QUANTUM EFFICIENCY;

EID: 79960596151 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3601469 Document Type: Article

Times cited : (40)

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