Effect of P-type last barrier on efficiency droop of blue InGaN light-emitting diodes

IEEE Journal of Quantum Electronics

Volumn 46, Issue 8, 2010, Pages 1214-1220

  Kuo, Yen Kuang ^a   Tsai, Miao Chan ^a   Yen, Sheng Horng ^b   Hsu, Ta Cheng ^b   Shen, Yu Jiun ^b  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

Efficiency droop; InGaN; Light emitting diodes; Numerical simulation

Indexed keywords

BLUE LEDS; ELECTRON CURRENTS; ENERGY-BAND DIAGRAM; HOLE INJECTION; INTERNAL QUANTUM EFFICIENCY; NUMERICAL SIMULATION; P-TYPE; P-TYPE DOPING; P-TYPE GAN; RADIATIVE RECOMBINATION; SIMULATION RESULT;

COMPUTER SIMULATION; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION;

LIGHT EMITTING DIODES;

EID: 77951536279     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2010.2045104     Document Type: Article

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