Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7954, Issue , 2011, Pages

  Wang, Tsun Hsin ^a   Chang, Jih Yuan ^a   Tsai, Miao Chan ^a   Kuo, Yen Kuang ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

graded barriers; InGaN; Light emitting diodes; numerical simulation

Indexed keywords

COMPOSITION-GRADED; DRIVING CURRENT; EFFICIENCY ENHANCEMENT; ENERGY-BAND DIAGRAM; ENHANCED EFFICIENCY; GRADED BARRIERS; HIGH CURRENTS; HOLE CURRENT; HOLE INJECTION; INGAN; INGAN LED; INJECTION EFFICIENCY; INTERNAL QUANTUM EFFICIENCY; LIGHT POWER; NUMERICAL SIMULATION; QUANTUM WELL; RADIATIVE RECOMBINATION RATE; SIMULATION RESULT; SOLID STATE LIGHTING;

COMPUTER SIMULATION; DIODES; GALLIUM NITRIDE; HOLE CONCENTRATION; INDIUM; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHTING; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WELLS; SOLID STATE DEVICES;

QUANTUM EFFICIENCY;

EID: 79952942735     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.874909     Document Type: Conference Paper

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