Carrier transportation and internal quantum efficiency of blue inGaN light-emitting diodes with P-Doped Barriers

IEEE Photonics Technology Letters

Volumn 22, Issue 6, 2010, Pages 374-376

  Tsai, Miao Chan ^a   Yen, Sheng Horng ^b   Kuo, Yen Kuang ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

InGaN; Light emitting diodes (LEDs); Quantum efficiency; Simulation

Indexed keywords

CARRIER DISTRIBUTIONS; CARRIER TRANSPORTATION; DOPED BARRIERS; DOPING CONCENTRATION; ELECTRON LEAKAGE; HOLE INJECTION; INGAN; INTERNAL QUANTUM EFFICIENCY; MULTIPLE QUANTUM WELLS; OUTPUT POWER; P-DOPING; QUANTUM WELL; SIMULATION RESULT;

DIODES; DOPING (ADDITIVES); ELECTRON INJECTION; GRAIN BOUNDARIES; HOLE CONCENTRATION; HOLE TRAPS; LIGHT EMISSION; LIGHT EMITTING DIODES; PHOSPHORUS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 77649142053     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2040075     Document Type: Article

References (10)

1. M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, "Origin of efficiency droop in GaN-based light-emitting diodes," Appl. Phys. Lett., vol. 91, pp. 183507-1-183507-3, Oct. 2007.
2. M. Maier, K. Köhler, M. Kunzer, W. Pletschen, and J. Wagner, "Reduced nonthermal rollover of wide-well GaInN light-emitting diodes," Appl. Phys. Lett., vol. 94, pp. 041113-1-041113-3, Jan. 2009.
3. K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, "Measurement of electron overflow in 450 nm InGaN light-emitting diode structures," Appl. Phys. Lett., vol. 94, pp. 061116-1-061116-3, Feb. 2009.
4. X. Ni, Q. Fan, R. Shimada, Ü. Özgür, and H. Morkoç, "Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells," Appl. Phys. Lett., vol. 93, pp. 171113-1-171113-3, Oct. 2008.
5. A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, "Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes," Appl. Phys. Lett., vol. 92, pp. 053502-1-053502-3, Feb. 2008.
6. J. P. Liu, J.-H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, and H. B. Wang, "Barrier effect on hole transport and carrier distribution in InGaN/GaN multiple quantum well visible light-emitting diodes," Appl. Phys. Lett., vol. 93, pp. 021102-1-021102-3, Jul. 2008.
7. I. V. Rozhansky and D. A. Zakheim, "Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping," Phys. Stat. Sol. (c), vol. 3, pp. 2160-2164, May 2006.
8. J. Xie, X. Ni, Q. Fan, R. Shimada, Ü. Özgür, and H. Morkoç, "On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers," Appl. Phys. Lett., vol. 93, pp. 121107-1-121107-3, Sep. 2008.
9. I. Vurgaftman and J. R. Meyer, "Band parameters for nitrogen-containing semiconductors," J. Appl. Phys., vol. 94, pp. 3675-3677, Sep. 2003.
10. V. Fiorentini, F. Bernardini, and O. Ambacher, "Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures, " Appl. Phys. Lett., vol. 80, pp. 1204-1206, Feb. 2002.