Effect of N-type AlGaN layer on carrier transportation and efficiency droop of blue InGaN light-emitting diodes

IEEE Photonics Technology Letters

Volumn 21, Issue 14, 2009, Pages 975-977

  Yen, Sheng Horng ^a   Tsai, Miao Chan ^b   Tsai, Meng Lun ^a   Shen, Yu Jiun ^a   Hsu, Ta Cheng ^a   Kuo, Yen Kuang ^b  

^a EPISTAR CORPORATION   (Taiwan)

^b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

Light emitting diodes; Light emitting diodes (LEDs); Piezoelectric effect; Simulation

Indexed keywords

ACTIVE REGIONS; ALGAN; ALGAN LAYERS; BLOCKING LAYERS; BLUE LEDS; CARRIER TRANSPORTATION; ELECTRON LEAKAGE; HIGH CURRENTS; INGAN LED; LIGHT-EMITTING DIODES (LEDS); N-TYPE ALGAN; P-TYPE; PIEZOELECTRIC EFFECT; QUANTUM WELL; SIMULATION; SIMULATION RESULT; UNIFORM DISTRIBUTION;

CURRENT DENSITY; DIODES; LIGHT EMISSION; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 67650698547     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2021155     Document Type: Article

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