Drain-dependence of tunnel field-effect transistor characteristics: The role of the channel

IEEE Transactions on Electron Devices

Volumn 58, Issue 12, 2011, Pages 4250-4257

  Mallik, Abhijit ^a   Chattopadhyay, Avik ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

Band to band tunneling (BTBT); CMOS scaling; drain current saturation; drain induced barrier lowering (DIBL); tunnel field effect transistors (TFETs)

Indexed keywords

BAND TO BAND TUNNELING; CMOS SCALING; CURRENT INJECTIONS; DEVICE SIMULATIONS; DOUBLE-GATE; DRAIN CURRENT SATURATION; DRAIN VOLTAGE; DRAIN-INDUCED BARRIER LOWERING (DIBL); GATE DRAIN; LOW POWER APPLICATION; METAL-OXIDE; OUTPUT CHARACTERISTICS; ROOM TEMPERATURE; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SUBTHRESHOLD SWING;

ELECTRIC FIELDS; MOSFET DEVICES; TRANSISTORS;

DRAIN CURRENT;

EID: 82155166236     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2169416     Document Type: Article

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