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Volumn 110, Issue 9, 2011, Pages

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

(12) Chen, Xinyi a Man Ching Ng, Alan a,b Fang, Fang a Hang Ng, Yip a Djurišić, Aleksandra B a Lam Tam, Hoi c Wai Cheah, Kok c Gwo, Shangjr d Kin Chan, Wai a Wai Keung Fong, Patrick e Fei Lui, Hsian e Surya, Charles e

a UNIVERSITY OF HONG KONG (Hong Kong)

b SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

c HONG KONG BAPTIST UNIVERSITY (Hong Kong)

d NATIONAL TSING HUA UNIVERSITY (Taiwan)

e HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE SPECTROSCOPY; EMISSION COLOR; FORWARD BIAS; HIGH BRIGHTNESS; IDENTICAL CONDITIONS; LUMINESCENCE PEAK; REVERSE BIAS; THIN-FILM STRUCTURE; TUNABLE EMISSIONS; VIOLET EMISSION; WHITE EMISSIONS; ZNO; ZNO NANOROD;

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; LUMINANCE; NANORODS; ZINC OXIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 81355142776 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3653835 Document Type: Article

Times cited : (35)

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