ZnO epilayers on GaN templates: Polarity control and valence-band offset

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1429-1433

  Hong, Soon Ku ^a   Kanada, Takashi ^a   Makino, Hisao ^a   Ko, Hang Ju ^a   Chen, Yefan ^a   Yao, Takafumi ^a   Tanaka, Akinori ^b   Sasaki, Hiroyuki ^b   Sato, Shigeru ^b   Imai, Daisuke ^c   Araki, Kiyoaki ^c   Shinohara, Makoto ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c SHIMADZU CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; HETEROJUNCTIONS; HIGH RESOLUTION ELECTRON MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPY; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY;

COAXIAL IMPACT COLLISION ION SCATTERING SPECTROSCOPY; EPILAYERS; HETEROINTERFACE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; VALENCE BAND OFFSET;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035535282     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1374630     Document Type: Conference Paper

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